BAS40 / -04 / -05 / -06 200mw, low v f, smd schottky barrier diode small signal diode ? surface device type mounting ? moisture sensitivity level 1 ? matte tin(sn) lead finish with nickel(ni) underplate ? pb free version and rohs compliant min max min max ? case : flat lead sot 23 small outline plastic package 2.80 3.00 0.110 0.118 1.20 1.40 0.047 0.055 0.30 0.50 0.012 0.020 1.80 2.00 0.071 0.079 2.25 2.55 0.089 0.100 0.90 1.20 0.035 0.043 maximum ratings electrical characteristics i r = 10 a i f = 1ma i f = 10ma i f = 40ma reverse leakage current v r = 30v junction capacitance notes:1. test condition : 8.3ms single half sine-wave superimposed on rated load (jedec method) notes:2. valid provided that electrodes are kept at ambient temperature ns dimensions a unit (inch) 0.022 ref 0.550 ref 0.38 0.2 - - reverse recovery time i f =i r =10ma, r l =100 ? , i rr =1m a trr 5.0 - symbol pf v r =1v, f=1.0mhz c j i r a - 1.00 reverse breakdown voltage type number ma mean forward current i o ma 200 357 v (br) 40 - units 5 mw 40 200 max min 200 40 -65 to + 125 symbol type number repetitive peak forward current i frm reverse voltage repetitive peak reverse voltage v rrm v r p d junction and storage temperature range t j , t stg i fsm thermal resistance (junction to ambient) (note 2) r ja features mechanical data ? green compound (halogen free) with suffix "g" on packing code and prefix "g" on date code ? high temperature soldering guaranteed: 260 c/10s ? terminal: matte tin plated, lead free., solderable per mil-std-202, method 208 guaranteed ? metal-on-silicon shcottky barrier ? weight : 0.008gram (approximately) g b c unit (mm) d e f forward voltage v f rating at 25 c ambient temperature unless otherwise specified. power dissipation -v units - 0.50 non-repetitive peak forward surge current (note 1) v maximum ratings and electrical characteristics value c v v c/w 0.6 a BAS40 BAS40-06 BAS40-05 BAS40-04 b a c d g f e version : c09
BAS40 / -04 / -05 / -06 200mw, low vf, smd schottky barrier diode small signal diode rating and sharacteristic curves ( BAS40 / -04 / -05 / -06 ) version : c09 fig.4- typical reverse characteristics fig.1- power derating curve p , power dissipation (mw) d 0 25 50 75 100 125 200 100 0 t , ambient temperature ( c) a fig.6- typical transient thermal characteristics transient thermal impedance. ( c/w) o 1 0.01 0.1 10 100 100 10 1 0.1 pulse duration. (sec) fig.2- maximum non-repetitive peak forward surge current per leg peak forward surge current. (ma) 1 2 5 10 20 100 50 600 300 0 number of cycles at 60hz 8.3ms single half sine wave (jedec method) fig.3- typical forward characteristics 00.2 1.2 instantaneous forward current (ma) t , instantaneous forward voltage (mv) j 1 0.1 0.01 0.001 0.0001 0.4 0.6 0.8 1.0 fig.5- typical total capacitance vs reverse voltage 4.0 2.0 0 0 5 10 15 20 reverse voltage junction capacitance (pf) f = 1.0mhz 10 20 30 40 10000 1000 100 10 1 0.1 v , reverse voltage. (v) r i, r instantaneous reverse current. ( nna) 0 t = -40 c a 0 t=0c a 0 t = 25 c a 0 t = 125 c a 0 t = 70 c a 0 t = -40 c a 0 t = 70 c a 0 t=0c a 0 t = 25 c a 0 t = 125 c a 0
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